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CY7C1312KV18-300BZXI
- Part No
- CY7C1312KV18-300BZXI
- Manufacturer
- Cypress Semiconductor Corp
- Description
- 18-Mbit QDR® II SRAM Two-Word Burst Architecture
- Datasheet
- CY7C1312KV18-300BZXI
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Access Time | 450 ps |
| Address Bus Width | 19 b |
| Clock Rate | 300 MHz |
| Density | 18 Mb |
| Frequency | 300 MHz |
| Interface | Parallel |
| Max Frequency | 300 MHz |
| Max Operating Temperature | 85 °C |
| Max Supply Current | 640 mA |
| Max Supply Voltage | 1.9 V |
| Memory Size | 2.3 MB |
| Memory Type | QDR, RAM, SRAM |
| Min Operating Temperature | -40 °C |
| Min Supply Voltage | 1.7 V |
| Nominal Supply Current | 640 mA |
| Number of Circuits | 1 |
| Number of Ports | 2 |
| Operating Supply Voltage | 1.8 V |
| Sync/Async | Synchronous |
| Word Size | 18 b |
| Case/Package | FBGA |
| Mount | Surface Mount |
| Number of Pins | 165 |
| Number of Terminals | 165 |
| Height - Seated (Max) | 1.4 mm |
| Length | 15 mm |
| Terminal Pitch | 1 mm |
| Width | 13 mm |
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