CSD25481F4T Generic image

CSD25481F4T

Part No
CSD25481F4T
Manufacturer
Texas Instruments
Description
MOSFET P-CH 20V 2.5A 3PICOSTAR P-Channel 20 V 2.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) -2.5 A
    Drain to Source Breakdown Voltage -20 V
    Drain to Source Resistance 90 mΩ
    Drain to Source Voltage (Vdss) -20 V
    Element Configuration Single
    Fall Time 6.7 ns
    Gate to Source Voltage (Vgs) -12 V
    Input Capacitance 189 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 500 mW
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 500 mW
    Rds On Max 88 mΩ
    Rise Time 3.6 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage -950 mV
    Turn-Off Delay Time 16.9 ns
    Turn-On Delay Time 4.1 ns
    Case/Package QFN
    Mount Surface Mount
    Number of Pins 3
    Height 350 µm
    Length 1.035 mm
    Width 635 µm
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