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CSD19534Q5AT
- Part No
- CSD19534Q5AT
- Manufacturer
- Texas Instruments
- Description
- 100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 15.1 mOhm 8-VSONP -55 to 150
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 44 A |
| Drain to Source Breakdown Voltage | 100 V |
| Drain to Source Resistance | 12.6 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Element Configuration | Single |
| Fall Time | 6 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 1.68 nF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 63 W |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Packaging | Tape & Reel (TR) |
| Power Dissipation | 3.2 W |
| Rds On Max | 15.1 mΩ |
| Rise Time | 14 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | 2.8 V |
| Turn-Off Delay Time | 20 ns |
| Turn-On Delay Time | 9 ns |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Weight | 24.012046 mg |
| Height | 1.1 mm |
| Length | 4.9 mm |
| Thickness | 1 mm |
| Width | 6 mm |
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