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CSD19532KTT
- Part No
- CSD19532KTT
- Manufacturer
- Texas Instruments
- Description
- 100-V, N channel NexFET™ power MOSFET, single D2PAK, 5.6 mOhm 2-DDPAK/TO-263 -55 to 175
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 136 A |
| Drain to Source Breakdown Voltage | 100 V |
| Drain to Source Resistance | 4.6 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Element Configuration | Single |
| Fall Time | 2 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 5.06 nF |
| Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 250 W |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Power Dissipation | 250 W |
| Rds On Max | 5.6 mΩ |
| Rise Time | 3 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 14 ns |
| Turn-On Delay Time | 9 ns |
| Case/Package | TO-263 |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Number of Pins | 2 |
| Height | 4.7 mm |
| Length | 10.16 mm |
| Thickness | 4.4 mm |
| Width | 8.41 mm |
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