CSD18532NQ5B Generic image

CSD18532NQ5B

Part No
CSD18532NQ5B
Manufacturer
Texas Instruments
Description
60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.4 mOhm 8-VSON-CLIP -55 to 150
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 100 A
    Drain to Source Breakdown Voltage 60 V
    Drain to Source Resistance 3.5 mΩ
    Drain to Source Voltage (Vdss) 60 V
    Element Configuration Single
    Fall Time 2.7 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 5.34 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 3.2 W
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 3.2 W
    Rds On Max 3.4 mΩ
    Rise Time 8.7 ns
    Schedule B 8541290080
    Turn-Off Delay Time 20 ns
    Turn-On Delay Time 8.2 ns
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 8
    Height 0 m
    Length 5 mm
    Thickness 950 µm
    Width 5 mm
    added to cart View cart