CSD15571Q2 Generic image

CSD15571Q2

Part No
CSD15571Q2
Manufacturer
Texas Instruments
Description
20-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 19.2 mOhm 6-WSON -55 to 150
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 22 A
    Drain to Source Breakdown Voltage 20 V
    Drain to Source Resistance 16 mΩ
    Drain to Source Voltage (Vdss) 20 V
    Element Configuration Single
    Fall Time 4.1 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 419 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.5 W
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 2
    Packaging Tape & Reel (TR)
    Power Dissipation 2.5 W
    Rds On Max 15 mΩ
    Rise Time 17.2 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 9.9 ns
    Turn-On Delay Time 4.7 ns
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 6
    Height 800 µm
    Length 2 mm
    Thickness 750 µm
    Width 2 mm
    added to cart View cart