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CIGT252010EH1R0MNE
- Part No
- CIGT252010EH1R0MNE
- Manufacturer
- Samsung
- Datasheet
- CIGT252010EH1R0MNE
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Composition | Thin Film |
| DC Resistance (DCR) | 30 mΩ |
| Inductance | 1 µH |
| Max Current Rating | 4.1 A |
| Max Operating Temperature | 125 °C |
| Min Operating Temperature | -40 °C |
| Number of Circuits | 1 |
| RMS Current (Irms) | 4.3 A |
| Saturation Current | 4.7 A |
| Schedule B | 8504500000, 8504500000|8504500000, 8504500000|8504500000|8504500000, 8504500000|8504500000|8504500000|8504500000 |
| Series Resistance | 30 mΩ |
| Shielding | No |
| Test Frequency | 1 MHz |
| Tolerance | 20 % |
| Case/Package | 2520 |
| Number of Terminals | 2 |
| Height | 1 mm |
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