BUZ32 H Generic image

BUZ32 H

Part No
BUZ32 H
Manufacturer
Infineon
Description
Mosfet N-ch 200V 9.5A TO220-3
Datasheet
BUZ32 H
Test Report
Available
Samples
Available

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    Availability:
    Upon a request

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 9.5 A
    Drain to Source Breakdown Voltage 200 V
    Drain to Source Resistance 400 mΩ
    Drain to Source Voltage (Vdss) 200 V
    Element Configuration Single
    Fall Time 30 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 530 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 75 W
    Min Breakdown Voltage 200 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 75 W
    Rds On Max 400 mΩ
    Rise Time 40 ns
    Turn-Off Delay Time 55 ns
    Turn-On Delay Time 10 ns
    Case/Package TO-220-3
    Number of Pins 3
    Number of Terminals 3
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