BUL213 Generic image

BUL213

Part No
BUL213
Manufacturer
STMicroelectronics
Description
Power Bipolar Transistor, 3A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Datasheet
BUL213
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) 1.3 kV
    Collector Emitter Breakdown Voltage 600 V
    Collector Emitter Saturation Voltage 900 mV
    Collector Emitter Voltage (VCEO) 600 V
    Current Rating 3 A
    Element Configuration Single
    Emitter Base Voltage (VEBO) 9 V
    hFE Min 16
    Max Collector Current 3 A
    Max Operating Temperature 150 °C
    Max Power Dissipation 60 W
    Min Operating Temperature -65 °C
    Number of Elements 1
    Polarity NPN
    Power Dissipation 60 W
    Voltage Rating (DC) 600 V
    Case/Package TO-220-3
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
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