Generic image
BUK98180-100A
- Part No
- BUK98180-100A
- Manufacturer
- NXP
- Description
- Power Field-Effect Transistor, 4.6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
- Datasheet
- BUK98180-100A
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Upon a request
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 4.6 A |
| Drain to Source Resistance | 201 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 8 W |
| Min Breakdown Voltage | 100 V |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 8 W |
| Threshold Voltage | 1.5 V |
| Case/Package | SOT-223 |
| Contact Plating | Tin |
| Number of Pins | 3 |
| Number of Terminals | 4 |
added to cart
View cart