BUK7E4R6-60E Generic image

BUK7E4R6-60E

Part No
BUK7E4R6-60E
Manufacturer
NXP
Description
Power Field-Effect Transistor, 100A I(D), 60V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor...
Datasheet
BUK7E4R6-60E
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 100 A
    Drain to Source Resistance 4.6 mΩ
    Min Breakdown Voltage 60 V
    Number of Elements 1
    Contact Plating Tin
    Number of Terminals 3
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