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BUK7606-55B
- Part No
- BUK7606-55B
- Manufacturer
- NXP
- Description
- Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
- Datasheet
- BUK7606-55B
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Upon a request
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 75 A |
| Drain to Source Resistance | 6 mΩ |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 254 W |
| Min Breakdown Voltage | 55 V |
| Number of Elements | 1 |
| Contact Plating | Tin |
| Number of Terminals | 2 |
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