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BUK7535-55
- Part No
- BUK7535-55
- Manufacturer
- NXP
- Description
- Power Field-Effect Transistor, 34A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
- Datasheet
- BUK7535-55
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Upon a request
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 34 A |
| Drain to Source Resistance | 35 mΩ |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 85 W |
| Min Breakdown Voltage | 55 V |
| Number of Elements | 1 |
| Power Dissipation | 85 W |
| Number of Terminals | 3 |
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