BU508AW Generic image

BU508AW

Part No
BU508AW
Manufacturer
STMicroelectronics
Description
Single Bipolar Transistor, NPN, 700 V, 8 A, 125 W, TO-247, 3 Pins, Through Hole
Datasheet
BU508AW
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Collector Emitter Breakdown Voltage 700 V
    Collector Emitter Saturation Voltage 1 V
    Collector Emitter Voltage (VCEO) 700 V
    Element Configuration Single
    Emitter Base Voltage (VEBO) 9 V
    hFE Min 5
    Max Collector Current 8 A
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 125 W
    Min Operating Temperature -65 °C
    Number of Elements 1
    Polarity NPN
    Power Dissipation 125 W
    Case/Package TO-247
    Contact Plating Tin
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Height 24.45 mm
    Length 15.75 mm
    Width 5.15 mm
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