BSZ12DN20NS3GATMA1 Generic image

BSZ12DN20NS3GATMA1

Part No
BSZ12DN20NS3GATMA1
Manufacturer
Infineon
Description
Power MOSFET, N Channel, 200 V, 11.3 A, 0.108 ohm, TSDSON, Surface Mount
Datasheet
BSZ12DN20NS3GATMA1
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 11.3 A
    Drain to Source Resistance 125 mΩ
    Drain to Source Voltage (Vdss) 200 V
    Fall Time 3 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 510 pF
    Max Dual Supply Voltage 200 V
    Max Operating Temperature 150 °C
    Max Power Dissipation 50 W
    Min Breakdown Voltage 200 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    On-State Resistance 125 mΩ
    Package Quantity 5000
    Packaging Tape & Reel
    Power Dissipation 50 W
    Rds On Max 125 mΩ
    Rise Time 4 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85
    Turn-Off Delay Time 10 ns
    Turn-On Delay Time 6 ns
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    added to cart View cart