BSP299H6327XUSA1 Generic image

BSP299H6327XUSA1

Part No
BSP299H6327XUSA1
Manufacturer
Infineon
Description
Trans MOSFET N-CH 500V 0.4A Automotive 4-Pin(3+Tab) SOT-223 T/R
Datasheet
BSP299H6327XUSA1
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 400 mA
    Drain to Source Breakdown Voltage 500 V
    Drain to Source Resistance 4 Ω
    Drain to Source Voltage (Vdss) 500 V
    Element Configuration Single
    Fall Time 30 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 300 pF
    Max Dual Supply Voltage 500 V
    Max Operating Temperature 150 °C
    Max Power Dissipation 1.8 W
    Min Breakdown Voltage 500 V
    Min Operating Temperature -55 °C
    Nominal Vgs 3 V
    Number of Elements 1
    On-State Resistance 4 Ω
    Package Quantity 1000
    Packaging Tape & Reel
    Power Dissipation 1.8 W
    Rds On Max 4 Ω
    Rise Time 15 ns
    Threshold Voltage 3 V
    Turn-Off Delay Time 55 ns
    Turn-On Delay Time 8 ns
    Case/Package SOT-223
    Mount Surface Mount
    Number of Pins 4
    Number of Terminals 4
    Height 1.6 mm
    Length 6.5 mm
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