BSP122 Generic image

BSP122

Part No
BSP122
Manufacturer
NXP
Description
N-channel enhancement mode vertical D-MOS transistor
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 550 mA
    Drain to Source Resistance 2.5 Ω
    Max Operating Temperature 150 °C
    Max Power Dissipation 1.5 W
    Min Breakdown Voltage 200 V
    Number of Elements 1
    Number of Terminals 4
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