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BSN011NE2LS
- Part No
- BSN011NE2LS
- Manufacturer
- Infineon
- Description
- Power Field-Effect Transistor, 50A I(D), 25V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Datasheet
- BSN011NE2LS
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 50 A |
| Drain to Source Resistance | 1.5 mΩ |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 78 W |
| Min Breakdown Voltage | 25 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Number of Pins | 6 |
| Number of Terminals | 6 |
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