Generic image
BLF8G20LS400PGVQ
- Part No
- BLF8G20LS400PGVQ
- Manufacturer
- NXP
- Description
- RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
- Datasheet
- BLF8G20LS400PGVQ
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Upon a request
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 3.4 A |
| Drain to Source Resistance | 55 mΩ |
| Drain to Source Voltage (Vdss) | 65 V |
| Frequency | 1.88 GHz |
| Gain | 19 dB |
| Gate to Source Voltage (Vgs) | 13 V |
| Max Operating Temperature | 225 °C |
| Min Operating Temperature | -65 °C |
| Output Power | 95 W |
| Test Current | 3.4 A |
| Test Voltage | 28 V |
| Voltage Rating | 65 V |
| Mount | Surface Mount |
| Number of Pins | 9 |
added to cart
View cart
Related Products