BFN39H6327 Generic image

BFN39H6327

Part No
BFN39H6327
Manufacturer
Infineon
Description
High Voltage Bipolar Transistor
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Collector Emitter Breakdown Voltage 300 V
    Collector Emitter Voltage (VCEO) 500 mV
    Max Collector Current 200 mA
    Max Power Dissipation 1.5 W
    Polarity PNP
    Transition Frequency 100 MHz
    Case/Package TO-261-4
    Mount Surface Mount
    added to cart View cart