BFG193 Generic image

BFG193

Part No
BFG193
Manufacturer
Siemens
Description
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
Datasheet
BFG193
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Collector Emitter Voltage (VCEO) 12 V
    Max Collector Current 80 mA
    Max Operating Temperature 150 °C
    Max Power Dissipation 500 mW
    Number of Elements 1
    Transition Frequency 8 GHz
    Number of Terminals 4
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