BD681 Generic image

BD681

Part No
BD681
Manufacturer
STMicroelectronics
Description
Bipolar junction transistor, NPN, 4 A, 100 ## Fehler ##, THT, TO-126, BD681
Datasheet
BD681
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) 100 V
    Collector Emitter Breakdown Voltage 100 V
    Collector Emitter Saturation Voltage 2.5 V
    Collector Emitter Voltage (VCEO) 100 V
    Continuous Collector Current 4 A
    Current Rating 4 A
    Element Configuration Single
    Emitter Base Voltage (VEBO) 5 V
    hFE Min 750
    Max Collector Current 4 A
    Max Operating Temperature 150 °C
    Max Power Dissipation 40 W
    Min Operating Temperature -65 °C
    Number of Elements 1
    Polarity NPN
    Power Dissipation 40 W
    Transition Frequency 10 MHz
    Voltage Rating (DC) 100 V
    Case/Package SOT-32
    Contact Plating Tin
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Height 10.8 mm
    Length 7.8 mm
    Width 2.7 mm
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