BD645-S Generic image

BD645-S

Part No
BD645-S
Manufacturer
Bourns
Description
Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Datasheet
BD645-S
Test Report
Available
Samples
Available

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    Availability:
    Upon a request

    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) 80 V
    Collector Emitter Breakdown Voltage 60 V
    Collector Emitter Saturation Voltage 2 V
    Collector Emitter Voltage (VCEO) 60 V
    Element Configuration Single
    Emitter Base Voltage (VEBO) 5 V
    hFE Min 750
    Max Collector Current 8 A
    Max Operating Temperature 150 °C
    Max Power Dissipation 2 W
    Min Operating Temperature -65 °C
    Number of Elements 1
    Polarity NPN
    Case/Package TO-220
    Mount Through Hole
    Number of Terminals 3
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