BD13916S Generic image

BD13916S

Part No
BD13916S
Manufacturer
onsemi
Description
1.5 A, 80 V NPN Power Bipolar Junction Transistor
Datasheet
BD13916S
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) 80 V
    Collector Emitter Breakdown Voltage 80 V
    Collector Emitter Saturation Voltage 500 mV
    Collector Emitter Voltage (VCEO) 80 V
    Current Rating 1.5 A
    Element Configuration Single
    Emitter Base Voltage (VEBO) 5 V
    hFE Min 100
    Max Collector Current 1.5 A
    Max Operating Temperature 150 °C
    Max Power Dissipation 12.5 W
    Min Operating Temperature -55 °C
    Number of Elements 1
    Packaging Bulk
    Polarity NPN
    Power Dissipation 1.25 W
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Termination Through Hole
    Voltage Rating (DC) 80 V
    Case/Package TO-126
    Contact Plating Tin
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 761 mg
    Height 11 mm
    Length 8 mm
    Width 3.25 mm
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