Generic image
BCR08PNH6327XTSA1
- Part No
- BCR08PNH6327XTSA1
- Manufacturer
- Infineon
- Description
- Bipolar junction transistor, NPN/PNP, 100 mA, 50 V, SMD, SOT-363, BCR08PN
- Datasheet
- BCR08PNH6327XTSA1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Base Voltage (VCBO) | 5 V |
| Collector Emitter Breakdown Voltage | 50 V |
| Collector Emitter Saturation Voltage | 300 mV |
| Collector Emitter Voltage (VCEO) | 50 V |
| Element Configuration | Dual |
| hFE Min | 70 |
| Input Resistance | 2.2 kΩ |
| Max Collector Current | 70 mA |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 250 mW |
| Min Operating Temperature | -65 °C |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape & Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 250 mW |
| Schedule B | 8541210080, 8541210080|8541210080, 8541210080|8541210080|8541210080, 8541210080|8541210080|8541210080|8541210080 |
| Transition Frequency | 100 MHz |
| Case/Package | SOT |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Number of Pins | 6 |
| Number of Terminals | 6 |
| Height | 800 µm |
| Length | 2 mm |
| Width | 1.25 mm |
added to cart
View cart
Related Products
