BCP55 E6327 Generic image

BCP55 E6327

Part No
BCP55 E6327
Manufacturer
Infineon
Description
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) 60 V
    Collector Emitter Breakdown Voltage 60 V
    Collector Emitter Saturation Voltage 500 mV
    Collector Emitter Voltage (VCEO) 60 V
    Current Rating 1 A
    Element Configuration Single
    Emitter Base Voltage (VEBO) 5 V
    Frequency 100 MHz
    Gain Bandwidth Product 100 MHz
    hFE Min 40
    Max Collector Current 1 A
    Max Operating Temperature 150 °C
    Max Power Dissipation 1.5 W
    Min Operating Temperature -65 °C
    Number of Elements 1
    Polarity NPN
    Power Dissipation 2 W
    Transition Frequency 100 MHz
    Voltage Rating (DC) 60 V
    Case/Package SOT-223-4
    Mount Surface Mount
    Number of Pins 4
    Number of Terminals 4
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