BC858BMTF Generic image

BC858BMTF

Part No
BC858BMTF
Manufacturer
onsemi
Description
BC858 Series 30 V CE Breakdown .1 A PNP Epitaxial Silicon Transistor - SOT-23
Datasheet
BC858BMTF
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) -30 V
    Collector Emitter Breakdown Voltage 30 V
    Collector Emitter Saturation Voltage 650 mV
    Collector Emitter Voltage (VCEO) 30 V
    Current Rating -100 mA
    Element Configuration Single
    Emitter Base Voltage (VEBO) -5 V
    Frequency 150 MHz
    Gain Bandwidth Product 150 MHz
    hFE Min 200
    Max Breakdown Voltage 30 V
    Max Collector Current 100 mA
    Max Frequency 150 MHz
    Max Operating Temperature 150 °C
    Max Power Dissipation 300 mW
    Min Operating Temperature -65 °C
    Number of Elements 1
    Polarity PNP
    Power Dissipation 310 mW
    Transition Frequency 150 MHz
    Voltage Rating (DC) -30 V
    Case/Package SOT-23
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 3
    Weight 30 mg
    Height 930 µm
    Length 2.9 mm
    Width 1.3 mm
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