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BC847BDW1T1G
- Part No
- BC847BDW1T1G
- Manufacturer
- onsemi
- Description
- ON Semi BC847BDW1T1G Dual NPN Bipolar Transistor; 0.1 A; 45 V; 6-Pin SC-88
- Datasheet
- BC847BDW1T1G
- Test Report
- Available
- Samples
- Available
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- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Base Voltage (VCBO) | 50 V |
| Collector Emitter Breakdown Voltage | 45 V |
| Collector Emitter Saturation Voltage | 600 mV |
| Collector Emitter Voltage (VCEO) | 45 V |
| Current Rating | 100 mA |
| Element Configuration | Dual |
| Emitter Base Voltage (VEBO) | 6 V |
| Frequency | 100 MHz |
| Gain Bandwidth Product | 100 MHz |
| hFE Min | 200 |
| Max Breakdown Voltage | 45 V |
| Max Collector Current | 100 mA |
| Max Frequency | 100 MHz |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 380 mW |
| Min Operating Temperature | -55 °C |
| Number of Elements | 2 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 380 mW |
| Schedule B | 8541210080, 8541210080|8541210080, 8541210080|8541210080|8541210080, 8541210080|8541210080|8541210080|8541210080 |
| Transition Frequency | 100 MHz |
| Voltage Rating (DC) | 45 V |
| Case/Package | SOT-363-6 |
| Contact Plating | Tin |
| Number of Pins | 6 |
| Number of Terminals | 6 |
| Height | 900 µm |
| Length | 2 mm |
| Width | 1.25 mm |
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