BC846CMTF Generic image

BC846CMTF

Part No
BC846CMTF
Manufacturer
onsemi
Description
BC846 Series 65 V 0.1 A 310 mW NPN Epitaxial Silicon Transistor - SOT-23
Datasheet
BC846CMTF
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) 80 V
    Collector Emitter Breakdown Voltage 65 V
    Collector Emitter Saturation Voltage 220 mV
    Collector Emitter Voltage (VCEO) 65 V
    Current Rating 100 mA
    Element Configuration Single
    Emitter Base Voltage (VEBO) 6 V
    Frequency 300 MHz
    Gain Bandwidth Product 300 MHz
    hFE Min 420
    Max Breakdown Voltage 65 V
    Max Collector Current 100 mA
    Max Frequency 300 MHz
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 310 mW
    Min Operating Temperature -65 °C
    Number of Elements 1
    Polarity NPN
    Power Dissipation 310 mW
    Schedule B 8541210080
    Transition Frequency 300 MHz
    Voltage Rating (DC) 65 V
    Case/Package SOT-23
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 3
    Weight 30 mg
    Height 1.2 mm
    Length 2.92 mm
    Width 1.3 mm
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