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BC640TA

Part No: BC640TA
Manufacturer: onsemi
Description: BC640 Series 80 V 1 A 1 W PNP Epitaxial Silicon Transistor - TO-92-3
Datasheet: BC640TA
Test Report: Available
Samples: Available

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Specification	Value
Collector Base Voltage (VCBO)	-100 V
Collector Emitter Breakdown Voltage	-80 V
Collector Emitter Saturation Voltage	-500 mV
Collector Emitter Voltage (VCEO)	80 V
Current	1 A
Current Rating	-1 A
Element Configuration	Single
Emitter Base Voltage (VEBO)	-5 V
Frequency	100 MHz
Gain Bandwidth Product	100 MHz
hFE Min	25
Max Breakdown Voltage	80 V
Max Collector Current	1 A
Max Frequency	100 MHz
Max Junction Temperature (Tj)	150 °C
Max Operating Temperature	150 °C
Max Power Dissipation	800 mW
Min Operating Temperature	-65 °C
Number of Elements	1
Polarity	PNP
Power Dissipation	1 W
Schedule B	8541210080, 8541210080\|8541210080\|8541210080\|8541210080\|8541210080
Transition Frequency	100 MHz
Voltage	80 V
Voltage Rating (DC)	-80 V
Case/Package	TO-92-3
Contact Plating	Tin
Mount	Through Hole
Number of Pins	3
Number of Terminals	3
Weight	240.007063 mg
Height	8.77 mm
Length	4.58 mm
Width	3.86 mm