AUIRF4104 Generic image

AUIRF4104

Part No
AUIRF4104
Manufacturer
Infineon
Description
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
Datasheet
AUIRF4104
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 75 A
    Drain to Source Breakdown Voltage 40 V
    Drain to Source Resistance 5.5 mΩ
    Drain to Source Voltage (Vdss) 40 V
    Element Configuration Single
    Fall Time 77 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 3 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 140 W
    Min Breakdown Voltage 40 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    On-State Resistance 5.5 mΩ
    Package Quantity 1000
    Power Dissipation 140 W
    Rds On Max 5.5 mΩ
    Rise Time 130 ns
    Threshold Voltage 2 V
    Turn-Off Delay Time 38 ns
    Turn-On Delay Time 16 ns
    Case/Package TO-220-3
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Height 9.017 mm
    Length 10.6426 mm
    Width 4.82 mm
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