Generic image
AFT05MS031NR1
- Part No
- AFT05MS031NR1
- Manufacturer
- NXP
- Description
- RF Power Transistor, 0.0018 to 0.52 GHz, 31 W, 17.7 dB, 13.6 V, SOT1732, LDMOS
- Datasheet
- AFT05MS031NR1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Drain to Source Breakdown Voltage | 40 V |
| Drain to Source Voltage (Vdss) | 40 V |
| Element Configuration | Single |
| Frequency | 520 MHz |
| Gain | 17.7 dB |
| Gate to Source Voltage (Vgs) | 12 V |
| Max Frequency | 520 MHz |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 294 W |
| Min Operating Temperature | -40 °C |
| Number of Elements | 1 |
| Output Power | 31 W |
| Power Dissipation | 294 W |
| Test Current | 10 mA |
| Test Voltage | 13.6 V |
| Voltage Rating | 40 V |
| Case/Package | TO-270-2 |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Number of Pins | 2 |
| Weight | 529.540742 mg |
added to cart
View cart
Related Products