AFGHL75T65SQ Generic image

AFGHL75T65SQ

Part No
AFGHL75T65SQ
Manufacturer
onsemi
Description
IGBT - 650 V FS4 standalone IGBT IGBT - 650 V FS4 without Co-pack diode
Datasheet
AFGHL75T65SQ
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Collector Emitter Breakdown Voltage 650 V
    Collector Emitter Saturation Voltage 2.1 V
    Collector Emitter Voltage (VCEO) 650 V
    Continuous Collector Current 80 A
    Max Collector Current 80 A
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 375 W
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 375 W
    Turn-Off Delay Time 106 ns
    Turn-On Delay Time 25 ns
    Number of Terminals 3
    Height 24.75 mm
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