2SK2596 Generic image

2SK2596

Part No
2SK2596
Manufacturer
Renesas
Description
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor...
Datasheet
2SK2596
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 400 mA
    Min Breakdown Voltage 17 V
    Number of Elements 1
    Number of Terminals 3
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