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2SJ649
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Product Specification
| Specification | Value |
|---|---|
| Manufacturer | Renesas Electronics America |
| Win Source Part Number | 038927-2SJ649 |
| Popularity | Medium |
| Fake Threat In the Open Market | 34 pct. |
| Supply and Demand Status | Limited |
| Categories | Discrete Semiconductor Products |
| Packaging | Bulk |
| Status | Active |
| Temperature Range - Operating | 150°C (TJ) |
| Mounting | Through Hole |
| Case / Package | TO-220 Isolated Tab |
| Technology | MOSFET |
| Polarity | P-Channel |
| Drain-Source Breakdown Voltage | 60V |
| Continuous Drain Current at 25°C | 20A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Max Gate Charge | 38nC @ 10V |
| Max Input Capacitance | 1900pF @ 10V |
| Maximum Gate-Source Voltage | ±20V |
| Power Dissipation (Max) | 2W (Ta), 25W (Tc) |
| Maximum Rds On at Id,Vgs | 48 mOhm @ 10A, 10V |
| Dimension | TO-220-3 Isolated Tab |
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