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2SJ529L06-E
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Product Specification
| Specification | Value |
|---|---|
| Temperature Range - Operating | 150°C |
| Supplier Device Package | DPAK(L)-(2) |
| Win Source Part Number | 1382392-2SJ529L06-E |
| Fake Threat In the Open Market | 60 pct. |
| Series | - |
| Package | Bulk |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Category | Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs |
| Mfr | Renesas Electronics America |
| Product Status | Obsolete |
| Package / Case | TO-251-3 Long Leads, IPak, TO-251AB |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| Power Dissipation (Max) | 20W (Tc) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 580 pF @ 10 V |
| FET Feature | - |
| RoHS Status | RoHS non-compliant |
| Standard Package | 295 pcs |
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