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2SD2012
- Part No
- 2SD2012
- Manufacturer
- STMicroelectronics
- Description
- Bipolar (Bjt) Single Transistor, Npn, 60 V, 3 Mhz, 25 W, 3 A, 20 Rohs Compliant: Yes
- Datasheet
- 2SD2012
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Base Voltage (VCBO) | 60 V |
| Collector Emitter Breakdown Voltage | 60 V |
| Collector Emitter Saturation Voltage | 400 mV |
| Collector Emitter Voltage (VCEO) | 60 V |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 7 V |
| Gain Bandwidth Product | 3 MHz |
| hFE Min | 20 |
| Max Collector Current | 3 A |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 25 W |
| Min Operating Temperature | -65 °C |
| Number of Elements | 1 |
| Polarity | NPN |
| Power Dissipation | 25 W |
| Transition Frequency | 3 MHz |
| Case/Package | TO-220-3 |
| Contact Plating | Tin |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
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