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2SB1201S-TL-E
- Part No
- 2SB1201S-TL-E
- Manufacturer
- onsemi
- Description
- Bipolar Transistor, -50V, -2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
- Datasheet
- 2SB1201S-TL-E
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Base Voltage (VCBO) | -60 V |
| Collector Emitter Breakdown Voltage | 50 V |
| Collector Emitter Saturation Voltage | -300 mV |
| Collector Emitter Voltage (VCEO) | 50 V |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | -6 V |
| Gain Bandwidth Product | 150 MHz |
| hFE Min | 140 |
| Max Breakdown Voltage | 50 V |
| Max Collector Current | 2 A |
| Max Frequency | 150 MHz |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 800 mW |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Schedule B | 8541210080, 8541210080|8541210080, 8541210080|8541210080|8541210080, 8541210080|8541210080|8541210080|8541210080 |
| Transition Frequency | 150 MHz |
| Case/Package | TO-252-3 |
| Contact Plating | Tin Bismuth |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Height | 2.3 mm |
| Length | 6.5 mm |
| Width | 5.5 mm |
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