2N6052G Generic image

2N6052G

Part No
2N6052G
Manufacturer
onsemi
Description
12 A, 100 V PNP Darlington Bipolar Power Transistor
Datasheet
2N6052G
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) 100 V
    Collector Emitter Saturation Voltage 2 V
    Collector Emitter Voltage (VCEO) 100 V
    Continuous Collector Current 12 A
    Current Rating -12 A
    Element Configuration Single
    Emitter Base Voltage (VEBO) 5 V
    hFE Min 100
    Max Collector Current 12 A
    Max Operating Temperature 200 °C
    Max Power Dissipation 150 W
    Min Operating Temperature -65 °C
    Number of Elements 1
    Polarity PNP
    Power Dissipation 150 W
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Transition Frequency 4 MHz
    Voltage Rating (DC) -100 V
    Body Material Metal
    Case/Package TO-204-3
    Contact Plating Tin
    Number of Pins 2
    Number of Terminals 2
    Weight 4.535924 g
    Height 8.51 mm
    Length 39.37 mm
    Width 26.67 mm
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