2N5550G Generic image

2N5550G

Part No
2N5550G
Manufacturer
onsemi
Description
Bipolar (Bjt) Single Transistor, General Purpose, Npn, 140 V, 300 Mhz, 625 Mw, 600 Ma, 60 Rohs Compliant: Yes |Onsemi 2N5550G.
Datasheet
2N5550G
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) 160 V
    Collector Emitter Breakdown Voltage 140 V
    Collector Emitter Saturation Voltage 250 mV
    Collector Emitter Voltage (VCEO) 140 V
    Current Rating 600 mA
    Element Configuration Single
    Emitter Base Voltage (VEBO) 6 V
    Frequency 300 MHz
    Gain Bandwidth Product 300 MHz
    hFE Min 20
    Max Collector Current 600 mA
    Max Frequency 300 MHz
    Max Operating Temperature 150 °C
    Max Power Dissipation 350 mW
    Min Operating Temperature -55 °C
    Number of Elements 1
    Packaging Bulk
    Polarity NPN
    Power Dissipation 625 mW
    Schedule B 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
    Termination Through Hole
    Transition Frequency 100 MHz
    Voltage Rating (DC) 140 V
    Case/Package TO-92-3
    Contact Plating Copper, Silver, Tin
    Number of Pins 3
    Number of Terminals 3
    Weight 4.535924 g
    Height 5.33 mm
    Length 5.2 mm
    Width 4.19 mm
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